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Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics Koichiro Ishibashi 2011 edition
Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics
Koichiro Ishibashi
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
310 pages, biography
| Médium | Knihy Paperback Book (Kniha s mäkkou väzbou a lepeným chrbtom) |
| Vydané | 27. novembra 2013 |
| ISBN13 | 9783642270185 |
| Vydavatelia | Springer-Verlag Berlin and Heidelberg Gm |
| Strany | 144 |
| Rozmery | 155 × 235 × 8 mm · 226 g |
| Jazyk | Nemčina |
| Editor | Ishibashi, Koichiro |
| Editor | Osada, Kenichi |
Vianočné darčeky je možné vrátiť do 31. januára