Young-Hee Kim
Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices Young-Hee Kim

Name: Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices
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Author: Young-Hee Kim

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Očakávané doručenie 31. júl - 10. aug

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Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices

Young-Hee Kim

Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm).

92 pages, X, 92 p.

Médium	Knihy Paperback Book (Kniha s mäkkou väzbou a lepeným chrbtom)
Vydané	31. decembra 2007
ISBN13	9783031014246
Vydavatelia	Springer International Publishing AG
Strany	92
Rozmery	234 × 191 × 13 mm · 220 g
Jazyk	Angličtina