Povedzte o tejto položke priateľom:
Neutron Transmutation Doping of Semiconductor Materials Robert D. Larrabee 1984 edition
Neutron Transmutation Doping of Semiconductor Materials
Robert D. Larrabee
In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing.
338 pages, 100 black & white illustrations
| Médium | Knihy Paperback Book (Kniha s mäkkou väzbou a lepeným chrbtom) |
| Vydané | 21. januára 2012 |
| ISBN13 | 9781461296751 |
| Vydavatelia | Springer-Verlag New York Inc. |
| Strany | 338 |
| Rozmery | 178 × 254 × 19 mm · 616 g |
| Jazyk | Angličtina |
Vianočné darčeky je možné vrátiť do 31. januára